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| 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A 2nd. Edition Features * Capable of low voltage operation (VDS = 1.5 to 3 V) * Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) * High power gain (PG = 21.0 dB typ. at f = 900 MHz) Outline CMPAK-4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK309 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 -4 -4 18 100 125 -55 to +125 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Gate 1 to cutoff current Gate 2 to cutoff current Symbol I G1SS I G2SS Min -- -- -0.2 -0.2 25 30 18 -- -- -- Typ -- -- -- -- 40 40 21 1.25 20 1.3 Max -20 -20 -1.5 -1.5 60 -- -- 1.5 -- -- Unit A A V V mA mS dB dB dB dB Test conditions VG1S = -4 V VG2S = VDS = 0 VG2S = -4 V VG1S = VDS = 0 VDS = 3 V, VG2S = 0 I D = 100 A VDS = 3 V, VG1S = 0 I D = 100 A VDS = 3 V, VG1S = 0 VG2S = 0 VDS = 3 V, VG2S = 0 I D = 5 mA, f = 1 kHz VDS = 3 V, VG2S = 0 I D = 5 mA, f = 900 MHz VDS = 1.5 V, VG2S = 0 I D = 3 mA, f = 900 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Zero gate voltege drain current I DSS Forward transfer admittance Power gain Noise figure Power gain Noise figure Note: Marking is "XV-" |yfs| PG NF PG NF 2 3SK309 Main Characteristics Maximum Channel Power Dissipation Curve 200 Channel Power Dissipation Pch (mW) 20 Typical Output Characteristics -0.4 V -0.5 V -0.6 V Pulse Test -0.7 V 150 Drain Current ID (mA) 16 12 100 8 -0.8 V 4 -0.9 V VG1S = -1 V 1 2 3 4 Drain to Source Voltage VDS (V) 5 50 0 50 100 150 200 Ambient Temperature Ta (C) 0 Drain Current vs. Gate1 to Source Voltage 20 VDS = 3 V 0V -0.2 V Drain Current ID (mA) -0.4 V -0.6 V 20 Drain Current vs. Gate2 to Source Voltage VDS = 3 V 0V -0.2 V -0.4 V Drain Current ID (mA) 16 16 12 12 -0.6 V 8 -0.8 V VG2S = -1 V -1.6 -1.2 -0.8 -0.4 0 Gate1 to Source Voltage VG1S (V) 8 -0.8 V VG1S = -1 V -1.6 -1.2 -0.8 -0.4 0 Gate2 to Source Voltage VG2S (V) 4 0 -2.0 4 0 -2.0 3 3SK309 Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance vs. Gate1 to Source Voltage 100 VDS = 3 V f = 1 kHz 80 0V 60 -0.2 V -0.4 V 40 -0.6 V 20 -0.8 V VG2S = -1 V 0 -1.2 -0.8 -0.4 0 -2.0 -1.6 Gate1 to Source Voltage VG1S (V) Forward Transfer Admittance vs. Drain Current 100 VDS = 3 V VG2S = 0 f = 1 kHz Forward Transfer Admittance |y fs | (mS) 80 60 40 20 0 4 8 12 16 Drain Current ID (mA) 20 25 Power Gain vs. Drain Current 3V 2.0 Noise Figure vs. Drain Current PG (dB) V DS = 1.5 V NF (dB) 20 1.6 V DS = 1.5 V 1.2 3V 15 Noise Figure V G2S = 0 f = 900 MHz Power Gain 10 0.8 5 0.4 V G2S = 0 f = 900 MHz 0 4 8 12 16 Drain Current I D (mA) 20 0 4 8 12 16 Drain Current I D (mA) 20 4 3SK309 Power Gain vs. Drain to Source Voltage 25 5 mA 20 Power Gain PG (dB) Noise Figure NF (dB) ID = 3 mA 1.6 3 mA 1.2 ID = 5 mA 2.0 Noise Figure vs. Drain to Source Voltage 15 10 0.8 5 VG2S = 0 f = 900 MHz 0 1 3 4 5 2 Drain to Source Voltage VDS (V) 6 0.4 VG2S = 0 f = 900 MHz 0 2 1 3 4 5 Drain to Source Voltage VDS (V) 6 Power Gain vs. Gate2 to Source Voltage 25 Gain Reduction vs. Gate2 to Source Voltage 50 VG1S is fixed for ID = 5 mA at VG2S = 0 VDS = 3 V f = 900 MHz Gain Reduction GR (dB) 20 Power Gain PG (dB) 40 15 30 10 5 0 -1 VG1S is fixed for ID = 5 mA at VG2S = 0 VDS = 3 V f = 900 MHz -0.8 -0.6 -0.4 -0.2 0 Gate2 to Source Voltage VG2S (V) 20 10 0 -1.5 -0.5 0 0.5 1.0 -1.0 Gate2 to Source Voltage VG2S (V) 5 3SK309 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 1 / div. 60 -150 -30 Test Condtion: VDS = 3 V , VG2S = 0 V ID = 5 mA , Zo = 50 100 to 2000 MHz (100 MHz step) Test Condtion: VDS = 3 V , VG2S = 0 V ID = 5 mA , Zo = 50 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.01 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 -3 Test Condtion: VDS = 3 V , VG2S = 0 V ID = 5 mA , Zo = 50 100 to 2000 MHz (100 MHz step) Test Condtion: VDS = 3 V , VG2S = 0 V ID = 5 mA , Zo = 50 100 to 2000 MHz (100 MHz step) 6 3SK309 Sparameter (VDS = 3 V, VG2S = 0, ID = 5 mA, Zo = 50 ) Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 S11 MAG 0.999 0.997 0.995 0.992 0.981 0.968 0.956 0.949 0.935 0.922 0.912 0.895 0.873 0.860 0.838 0.822 0.807 0.787 0.767 0.756 ANG -2.8 -5.9 -9.4 -12.3 -15.2 -18.9 -21.8 -24.5 -27.6 -30.7 -33.5 -36.2 -38.7 -41.4 -43.8 -45.6 -48.3 -50.7 -52.4 -55.0 S21 MAG 3.29 3.27 3.29 3.26 3.23 3.22 3.20 3.15 3.14 3.12 3.06 3.03 2.97 2.93 2.89 2.85 2.83 2.79 2.74 2.69 ANG 176.7 173.1 169.0 165.8 161.9 158.3 154.4 151.3 147.4 143.7 140.3 136.7 133.3 130.1 126.9 123.6 120.5 117.4 114.4 110.9 S12 MAG 0.00167 0.00302 0.00394 0.00506 0.00703 0.00797 0.00911 0.0104 0.0114 0.0123 0.0137 0.0139 0.0150 0.0161 0.0162 0.0171 0.0178 0.0185 0.0186 0.0190 ANG 95.2 89.0 80.5 83.7 80.8 78.1 76.9 77.1 73.2 72.1 71.9 70.8 68.5 68.5 67.2 66.6 67.2 66.0 64.3 63.7 S22 MAG 0.963 0.963 0.961 0.959 0.957 0.955 0.953 0.949 0.946 0.942 0.939 0.935 0.931 0.926 0.922 0.918 0.913 0.909 0.905 0.901 ANG -0.9 -2.2 -3.5 -5.0 -6.3 -8.0 -9.2 -10.6 -12.0 -13.5 -14.7 -16.0 -17.3 -18.6 -20.2 -21.5 -22.7 -23.8 -25.5 -26.6 7 3SK309 Power Gain, Noise Figure Test Circuit V G2 1000 pF VD 1000 pF Unit : Resistance ( ) Capacitance (F) 47 k RFC 1k L3 1000 pF L1 L4 10 p max 10 p max L2 Input (50 ) 47 k 1000 pF Output (50 ) V G1 L1 to L4 : 1 mm copper wire L1 : 4 6 32 L3 : 6 6 26 L2 : 7 25 5 L4 : 7 21 6 90 120 90 120 Unit : mm RFC : 3 turn, 6 mm inside dia ( 1 mm enameled copper wire) 8 3SK309 Package Dimentions Unit: mm 2.0 0.2 1.3 0.65 0.65 0.3 - 0.05 + 0.1 0.425 0.3 - 0.05 + 0.1 0.16 - 0.06 + 0.1 3 2 2.1 0.3 1.25 0 ~ 0.1 4 0.3 - 0.05 0.65 + 0.1 1 0.6 0.425 0.9 0.1 0.4 - 0.05 + 0.1 1.25 0.2 Hitachi code EIAJ JEDEC CMPAK-4 9 Datasheet Title Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. 1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning. If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then consult a physician without delay. 2. Disposal of this product must be handled, separately from other general refuse, by a specialist processing contractor in the same way as dangerous items. 4 Datasheet Title Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 5 |
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